by Naval Postgraduate School, Available from the National Technical Information Service in Monterey, Calif, Springfield, Va .
Written in English
|Contributions||Panholzer, Rudolf, Wight, Randy Lee|
|The Physical Object|
|Pagination||124 p. ;|
|Number of Pages||124|
Ferroelectric memory devices and a proposed standardized test system design. By Javier M. Covelli. The physical characteristics of thin-film ferroelectric capacitors and their subsequent integration into memory design may prove ferroelectric devices to be the ultimate in design for non-volatile, radiation hard computer memory. Author: Javier M. Covelli. Updating its bestselling predecessor, Ferroelectric Devices, Second Edition assesses the last decade of developments—and setbacks—in the commercialization of ferroelectricity. Field pioneer and esteemed author Uchino provides insight into why this relatively nascent and interdisciplinary process has failed so far without a systematic accumulation of fundamental knowledge regarding Book Edition: 2nd Edition. The basic constructive and technological solutions in the field of the design of ferroelectric memory devices, as well as the “roadmaps” of the development of this technology, have been discussed. Updating its bestselling predecessor, Ferroelectric Devices, Second Edition assesses the last decade of developments-and setbacks-in the commercialization of ferroelectricity.
Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale production. This is the first text on ferroelectric memories that is not just an edited collection of papers by different authors. devices can operate at low voltagetresholds. Fuijtsu even incorporated a 32kbit ferroelectric memory device in the SONY playstation 2. Currently also nano-ferroelectrics are considered for device applications as well as multiferroics. Looking at Moore’s law it will be those nano memory devices which will become important in the near future. We are looking forward to next week’s International Memory Workshop (IMW) which will be a virtual event. In session #6, Haidi Zhou from FMC will present latest results on “Endurance and targeted programming behavior of HfO 2-FeFETs”.. Also check out the program and discover additional contributions on ferroelectric HfO 2 from Globalfoundries, NaMLab, Fraunhofer and many more. DRAM Cell Observations 1T DRAM requires a sense amplifier for each bit line, due to charge redistribution read-out. DRAM ll i lDRAM memory cells are single-enddi SRAMded in contrast to SRAM cells. The read-out of the 1T DRAM cell is destructive; read and ref h ti f t tifresh operations are necessary for correct operation. Unlike 3T cell, 1T cell requires presence of an extra.
In , four years from this proposal, a semiconductor- based ferroelectric memory was proposed by Ross. 2 In the late s, some start-up companies in the US began the development of practical Si-based capacitor-type FRAMs 3, 4 and many electronics companies around the world started competing in the development of FRAM, aiming to realize. For stand‐alone memory application, a ferroelectric NAND (Fe‐NAND) flash memory has been developed to achieve low power consumption, high reliability, and high scalability. For logic applications, it has been suggested that a FET with a ferroelectric gate stack may achieve negative capacitance and subthreshold slope below 60 mV dec −1. Abstract: Ferroelectric FETs (FEFETs) offer intriguing possibilities for the design of low power nonvolatile memories by virtue of their three-terminal structure coupled with the ability of the ferroelectric (FE) material to retain its polarization in the absence of an electric field. Utilizing the distinct features of FEFETs, we propose a 2-transistor (2T) FEFET-based nonvolatile memory with. This book provides readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices. The second edition presents new advances of the ferroelectric FETs employing HfO2-based ferroelectric gate insulators.